|
|||||||
|
|||||||
|
|
|
|||||||
|
|||||||
|
|
| SN75185N资料 | |
|
SN75185N PDF Download |
|
File Size : 116 KB
Manufacturer:TI Description:Honeywells enhanced SOI RICMOS™ IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate lengthLeff). Additional features include tungsten via plugs, Honeywells proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening. |
|
| 相关型号 | |
| ◆ Z9036112PSC | |
| ◆ Z86C6116PSC | |
| ◆ Z84C3006PEC | |
| ◆ Z0861505PSC | |
| ◆ XTR110KP | |
| ◆ XTR106UA | |
| ◆ XTR105UA | |
| ◆ XTR101AP | |
| ◆ XN4601 | |
| ◆ XN4501 | |
| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
|
型 号：SN75185N 厂 家：TI 封 装：DIP 批 号：06+ 数 量：5000 说 明： |
|||||
|
运 费：广东省内10元(平邮),广东省外20元(快递) 所在地：深圳市 新旧程度： |
|||||
| 联系人：黄林锋 |
| 电 话：0755-82579969,83255343 |
| 手 机：13714599954, |
| QQ：172517499,137550090 |
| MSN：zfdz168@hotmail.com |
| 传 真：0755-82738881 |
| EMail：zfdz168@163.com |
| 公司地址： 深圳市福田区华强北路华强广场B座28楼L室 |
技术支持:维库电子市场网