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OP27GS资料 | |
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OP27GS PDF Download |
File Size : 116 KB
Manufacturer: Description: The TC55VBM416AFTN is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.9 µA standby current (at VDD = 3 V, Ta = 25C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40 to 85C, the TC55VBM416AFTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM416AFTN is available in a plastic 48-pin thin-small-outline package (TSOP). |
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价 格 | |||||
型 号:OP27GS 厂 家: 封 装: 批 号:06+ 数 量:1000 说 明: |
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运 费:广东省内10元(平邮),广东省外20元(快递) 所在地:深圳市 新旧程度: |
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联系人:黄林锋 |
电 话:0755-82579969,83255343 |
手 机:13714599954, |
QQ:172517499,137550090 |
MSN:zfdz168@hotmail.com |
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公司地址: 深圳市福田区华强北路华强广场B座28楼L室 |