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| LM358MX资料 | |
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LM358MX PDF Download |
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File Size : 116 KB
Manufacturer:NS Description:Notes: 8. Test conditions assume signal transition time of 1V/ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL. 9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than t. 10. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state. 11. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals. 12. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 13. WE is HIGH for Read cycle. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：LM358MX 厂 家：NS 封 装：SOP8 批 号：06+ 数 量：5000 说 明：绝对原装深圳现货 |
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运 费：广东省内10元(平邮),广东省外20元(快递) 所在地：深圳市 新旧程度： |
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| 联系人：黄林锋 |
| 电 话：0755-82579969,83255343 |
| 手 机：13714599954, |
| QQ：172517499,137550090 |
| MSN：zfdz168@hotmail.com |
| 传 真：0755-82738881 |
| EMail：zfdz168@163.com |
| 公司地址： 深圳市福田区华强北路华强广场B座28楼L室 |
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