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| BA6289资料 | |
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BA6289 PDF Download |
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File Size : 116 KB
Manufacturer: Description:Honeywells enhanced SOI RICMOS™ IV (Radiation In- sensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The FIFO is fabricated with Honeywells radiation hardened technology, and is de- signed for use in systems operating in radiation environ- ments. The SOI RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.8 µm, (0.65 µm effective gate arrayLeff). Additional features include tungsten via plugs, Honeywells proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：BA6289 厂 家： 封 装：SOP 批 号：05+ 数 量：1000 说 明： |
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运 费：广东省内10元(平邮),广东省外20元(快递) 所在地：深圳市 新旧程度： |
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| 联系人：黄林锋 |
| 电 话：0755-82579969,83255343 |
| 手 机：13714599954, |
| QQ：172517499,137550090 |
| MSN：zfdz168@hotmail.com |
| 传 真：0755-82738881 |
| EMail：zfdz168@163.com |
| 公司地址： 深圳市福田区华强北路华强广场B座28楼L室 |
