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| 74LVTH244ANSR资料 | |
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74LVTH244ANSR PDF Download |
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File Size : 116 KB
Manufacturer:TI Description: These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：74LVTH244ANSR 厂 家：TI 封 装：5.2mm 批 号：99+ 数 量：1520 说 明： |
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运 费：广东省内10元(平邮),广东省外20元(快递) 所在地：深圳市 新旧程度： |
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| 联系人：黄林锋 |
| 电 话：0755-82579969,83255343 |
| 手 机：13714599954, |
| QQ：172517499,137550090 |
| MSN：zfdz168@hotmail.com |
| 传 真：0755-82738881 |
| EMail：zfdz168@163.com |
| 公司地址： 深圳市福田区华强北路华强广场B座28楼L室 |
