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| 74ACT08DR资料 | |
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74ACT08DR PDF Download |
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File Size : 116 KB
Manufacturer:TI Description:This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：74ACT08DR 厂 家：TI 封 装：3.9mm 批 号：02+ 数 量：207 说 明： |
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运 费：广东省内10元(平邮),广东省外20元(快递) 所在地：深圳市 新旧程度： |
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| 联系人：黄林锋 |
| 电 话：0755-82579969,83255343 |
| 手 机：13714599954, |
| QQ：172517499,137550090 |
| MSN：zfdz168@hotmail.com |
| 传 真：0755-82738881 |
| EMail：zfdz168@163.com |
| 公司地址： 深圳市福田区华强北路华强广场B座28楼L室 |
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